| PART |
Description |
Maker |
| MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MII300-12A4 MDI300-12A4 MID300-12A4 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 330 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| CM50DY-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM75DU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM75E3U-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM300HA-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150DU-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM200DU-12H |
HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules: 600V
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM200DY-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
